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詳細摘要： Niobium atoms are perfectly incorporated into ReS? matrix.

詳細摘要： Our MoWS2 alloys with the chemical formula MoxW（1-x）S2 crystals perfectly crysta...

詳細摘要： Rhenium atoms perfectly incorporated into MoS? matrix.

詳細摘要： Molybdenum atoms perfectly incorporated into ReS2 matrix.

詳細摘要： Niobium atoms are perfectly incorporated into ReS? matrix.

詳細摘要： Our newest class of material: Sb2xAs2（1-x）S3 comes in perfect 1:1:3 stoichiometr...

詳細摘要： Synthetic MoS2 crystals have been I2 （iodine） intercalated to achieve p-type dop...

詳細摘要： High purtiy WS2 crystals have been I2 （iodine） intercalated to achieve p-type do...

詳細摘要： Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly lumine...

詳細摘要： Tungsten disulfide （2H-WS2） crystals are extremely rare in nature and are less t...

詳細摘要： Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk ...

詳細摘要： Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk ...

詳細摘要： More than a decade of growth optimization in chemical vapor transport （CVT） as w...

詳細摘要： 100% environmentally stable metallic NbS2 （niobium disulfide） crystals: NbS2 dis...

詳細摘要： Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsem...

詳細摘要： ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, ex...

詳細摘要： Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band ...

詳細摘要： NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's ma...

詳細摘要： 14 years of growth optimization in chemical vapor transport （CVT） as well as flu...

詳細摘要： Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly lumine...