久久国产精品午夜一区_91精品國產高清久久久久久91_?级毛片免费全部播放_欧美色图在线视频一区二区三区_国产综合亚洲一区二区三区_中文字幕熟女网_国产精品男人爽免费视频_九九无码网战_亚洲日本三级电影在线观看_欧美日韩DVD手机在线不卡

泰州巨納新能源有限公司
中級會員 | 第4年

13651969369

當前位置:泰州巨納新能源有限公司>>二維材料>>硫化物晶體>> SnS crystals 硫化錫晶體 (Tin sulfide)

SnS crystals 硫化錫晶體 (Tin sulfide)

參   考   價: 7030.4

訂  貨  量: ≥1 片

具體成交價以合同協議為準

產品型號

品       牌2D Semiconductors

廠商性質生產商

所  在  地泰州市

更新時間:2024-06-02 18:10:41瀏覽次數:926次

聯系我時,請告知來自 化工儀器網
同類優質產品更多>
供貨周期 現貨 應用領域 環保,化工,地礦,能源
Our single crystal SnS (Tin sulfide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques.

Our single crystal SnS (Tin sulfide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques. hey are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any transport agent (halide) impurities. In contrast to commonly used chemical vapor transport (CVT) technique, flux grown crystals are well known for their structural perfection and electronic/optical performance. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization data set in each sample piece to ensure structural, optical, and electronic consistency.

Characteristics of vdW SnS crystals

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.


會員登錄

×

請輸入賬號

請輸入密碼

=

請輸驗證碼

收藏該商鋪

X
該信息已收藏!
標簽:
保存成功

(空格分隔,最多3個,單個標簽最多10個字符)

常用:

提示

X
您的留言已提交成功!我們將在第一時間回復您~
撥打電話
在線留言
主站蜘蛛池模板: 阆中市| 娱乐| 曲松县| 赣州市| 武山县| 门头沟区| 邮箱| 贺兰县| 呼玛县| 广汉市| 长沙县| 宣汉县| 枝江市| 永年县| 宾川县| 梁平县| 奉贤区| 将乐县| 龙海市| 玉林市| 托克逊县| 遂溪县| 秦皇岛市| 定边县| 平原县| 紫云| 台州市| 祁东县| 屏东县| 日照市| 承德县| 涪陵区| 丹东市| 竹北市| 会同县| 德惠市| 萨迦县| 兰州市| 曲阜市| 页游| 平远县|