久久国产精品午夜一区_91精品國產高清久久久久久91_?级毛片免费全部播放_欧美色图在线视频一区二区三区_国产综合亚洲一区二区三区_中文字幕熟女网_国产精品男人爽免费视频_九九无码网战_亚洲日本三级电影在线观看_欧美日韩DVD手机在线不卡

泰州巨納新能源有限公司
中級會員 | 第4年

13651969369

當前位置:泰州巨納新能源有限公司>>二維材料>>硒化物晶體>> MoSSe 硒化硫鉬晶體

MoSSe 硒化硫鉬晶體

參   考   價: 7579.65

訂  貨  量: ≥1 片

具體成交價以合同協議為準

產品型號

品       牌2D Semiconductors

廠商性質生產商

所  在  地泰州市

更新時間:2024-06-03 10:54:00瀏覽次數:858次

聯系我時,請告知來自 化工儀器網
同類優質產品更多>
供貨周期 現貨 應用領域 環保,化工,能源,綜合
Our MoSSe alloys with the chemical formula MoS2xSe2(1-x) crystals perfectly crystallize in 2H phase and come at different alloy ratios x.

Our MoSSe alloys with the chemical formula MoS2xSe2(1-x) crystals perfectly crystallize in 2H phase and come at different alloy ratios x. Our crystals are grown using two different techniques through chemical vapor transport (CVT) or flux zone growth (see description of these two methods below) and their composition values were determined by XPS, SAED, and EDS measurements.. These crystals all possess extremely narrow PL bandwidths, display clean PL spectra, high carrier mobility, extremely clean and sharp XRD peaks, and negligible amount of defects (see published results as well as CVT vs. Flux based methods below ). These crystals come with guaranteed alloying and valleytronic response, sharp PL, and good electronic response.

Important advantages of our crystals

1. Crystals come fully characterized using macro, micro, and nanoscale measurements (see below)

2. Thanks to our improved flux zone growth method, our crystals are homogeneously alloyed which means across the specimen you will only find one particular x composition.

3. No separation: Phase separation is commonly observed in 2D TMDCs alloys when cooling profiles are not controlled carefully. Our R&D team has worked over five (5) years to solely solve this problem.

Properties of layered MoSSe alloys

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.


 


會員登錄

×

請輸入賬號

請輸入密碼

=

請輸驗證碼

收藏該商鋪

X
該信息已收藏!
標簽:
保存成功

(空格分隔,最多3個,單個標簽最多10個字符)

常用:

提示

X
您的留言已提交成功!我們將在第一時間回復您~
撥打電話
在線留言
主站蜘蛛池模板: 额济纳旗| 崇礼县| 丹凤县| 福鼎市| 长海县| 深水埗区| 湘乡市| 宜春市| 勐海县| 富蕴县| 日土县| 湾仔区| 青铜峡市| 通辽市| 鄢陵县| 武冈市| 忻州市| 珠海市| 湘阴县| 灵山县| 易门县| 新源县| 且末县| 新宁县| 炉霍县| 贵港市| 南皮县| 永胜县| 台安县| 天柱县| 文安县| 哈尔滨市| 昆山市| 芒康县| 中江县| 新沂市| 浠水县| 娄烦县| 定南县| 八宿县| 玉山县|